Semiconductor lasers comprising rare earth metal-doped diamond

Details Semiconductor lasers comprising rare earth metal-doped diamond Semiconductor lasers comprising rare earth metal-doped diamond

1996-03-15

1998-09-22

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 41, 257 77, H01S 319

Patent

active

058125736

ABSTRACT:
In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.

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Japanese article published on Sep. 20, 1991, Edited by Zaidan Hojin Nihon Kikai Gakkai, President: Fumio Sato.

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