CMOS device with perpendicular channel current directions

Details CMOS device with perpendicular channel current directions CMOS device with perpendicular channel current directions

1992-01-29

1994-05-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

257206, 257287, 257369, 257401, H01L 2702, H01L 2710

Patent

active

053171756

ABSTRACT:
P channel MOSFET and N channel MOSFET are formed in a (011) orientated semiconductor surface in such a manner that the channel of the P channel MOSFET is perpendicular to the channel of the N channel MOSFET. This arrangement can reduce a total channel resistance. The P channel MOSFET is formed so that the channel is parallel to the <011> direction, for example, and the N channel MOSFET is formed so that the channel is perpendicular to the <011> direction.

REFERENCES:
patent: 3476991 (1969-11-01), Mize et al.
patent: 3603848 (1971-09-01), Sato et al.
patent: 4668972 (1987-05-01), Sato et al.
patent: 4816887 (1989-03-01), Sato
patent: 4857986 (1989-08-01), Kinugawa
"Fully Symmetric Cooled CMOS on (110) Plane", by M. Aoki et al, IEEE Transactions on Electron Devices, vol. IE-ED, No. 8, Aug. 1989, pp. 1429-1433.

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