Semiconductor light-emitting device with InGaAlp

Details Semiconductor light-emitting device with InGaAlp Semiconductor light-emitting device with InGaAlp

1993-05-10

1994-05-31

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 90, 257 94, 257 96, 257 97, H01L 3300

Patent

active

053171675

ABSTRACT:
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5103271 (1992-04-01), Izumiya et al.
patent: 5164798 (1992-11-01), Huang
patent: 5198686 (1993-03-01), Yoshimura

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