Method of manufacturing a semiconductor device comprising metal

Details Method of manufacturing a semiconductor device comprising metal Method of manufacturing a semiconductor device comprising metal

1992-07-16

1994-05-31

Quach, T. N.

Fishing, trapping, and vermin destroying

437160, 437162, 437165, 437247, 148DIG19, 148DIG147, H01L 21223, H01L 21225, H01L 21283

Patent

active

053169778

ABSTRACT:
According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transitition layer containing a constituent element of the semiconductor substrate on the impurity diffusion layer, and doping an impurity of the second conductivity type in the metal compound layer by annealing in a reducing atmosphere. A semiconductor device includes a semiconductor substrate of a first conductivity type, an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate of the first conductivity type, and a conductive metal compound layer formed on the impurity diffusion layer, wherein the conductive metal compound layer consists of at least a transition metal, a semiconductor element, and an impurity element of the second conductivity type which is an impurity element of the second conductivity type, and the impurity element of the second conductivity in the conductive metal compound layer is uniformly distributed.

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