Low noise, high power pseudomorphic HEMT

Details Low noise, high power pseudomorphic HEMT Low noise, high power pseudomorphic HEMT

1997-07-03

1998-09-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

H01L 29778

Patent

active

058118446

ABSTRACT:
In a DH-PHEMT the channel layer comprises InGaAs, the donor layers comprise In.sub.y Ga.sub.1-y P(0.15.ltoreq.y.ltoreq.0.85), and each of the spacer layers comprises an In.sub.0.5-q (Al.sub.x Ga.sub.1-x).sub.0.5+q P outer spacer layer (0.2.ltoreq.x) and an Al.sub.r Ga.sub.1-r As (0.ltoreq.r.ltoreq.0.3) inner spacer layer. In another embodiment, a similar InAlGaP layer forms a Schottky barrier gate contact with a barrier height of at least 1.0 eV and hence low leakage current. The devices exhibit the capability for both low noise and high power operation at low supply voltages.

REFERENCES:
Dickmann, et al., "(A10.7Ga0.3)0.5In0.5P/In0.15Ga0.85As/GaAs Heterostructure Field Effect Transistors with Very Thin Highly p-Doped Surface Layer," IEEE Trans. Electron Dev., vol. 42, No. 1, Jan., 1995, pp. 2-7.
Watanabe et al., Journal of Applied Physics, vol. 60, No. 3, pp. 1032-1037 (1986).
Watanabe et al., Applied Physics Letters, vol. 50, No. 14, pp. 906-908 (1987).
Bachem et al., Inst. Phys. Conf., Ser. No. 136, Ch.2, pp. 35-40 (1993).
Kuo, Thin Solid Films, vol. 231, pp. 158-172 (1993).
Kuo, Applied Physics Letters, vol. 62, No. 10, pp. 1105-1107 (1993).
Takikawa et al., IEEE Electron Device Letters, vol. 14, No. 8, pp. 406-408 (1993).
Pereiaslavets et al., IEEE Electron Device Letters, vol. 43, No. 10, pp. 1659-1663 (1996).

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