Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-08-28
1998-09-22
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 56, 257 57, 257 66, H01L 2900
Patent
active
058118365
ABSTRACT:
A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
REFERENCES:
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5614731 (1997-03-01), Uchikoga et al.
patent: 5614732 (1997-03-01), Yamazaki et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5648674 (1997-07-01), Weisfield et al.
LG Electronics Inc.
Wallace Valencia
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