Thin film transistor having protective layer for pixel electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 56, 257 57, 257 66, H01L 2900

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active

058118365

ABSTRACT:
A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.

REFERENCES:
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5614731 (1997-03-01), Uchikoga et al.
patent: 5614732 (1997-03-01), Yamazaki et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5648674 (1997-07-01), Weisfield et al.

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