Resistive element using depletion-mode MOSFET's

Details Resistive element using depletion-mode MOSFET's Resistive element using depletion-mode MOSFET's

1990-03-30

1991-04-23

Jackson, Jr., Jerome

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307269, 307304, 307475, H01L 2702

Patent

active

050103857

ABSTRACT:
The present invention provides a linear resistance element comprising a p of transistors. The transistor pair includes first and second depletion-type field effect transistors each having a gate, a source electrode, a drain electrode, a channel mobility, and a threshold voltage. The source and drain electrodes of each transistor define a source-drain current path through a channel. The first and second transistors are connected with their source-drain paths in series with each other. The gates of the first and second transistors are connected in common to the series connection between the source-drain current paths. The channel width-to-length ratio, channel mobility, and threshold voltage of the first transistor are substantially equal to the corresponding properties of the second transistor. Any number of transistor pairs may be serially connected together.

REFERENCES:
patent: 4001612 (1977-01-01), Aoki et al.
patent: 4152716 (1979-05-01), Torii et al.
patent: 4173734 (1979-11-01), Hirasawa et al.
patent: 4318040 (1982-03-01), Hilbourne
patent: 4667216 (1987-05-01), Bigall et al.
patent: 4810907 (1989-03-01), Tohyama
patent: 4833342 (1989-05-01), Kiryu et al.

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