Method of making trench JFET integrated circuit elements

Details Method of making trench JFET integrated circuit elements Method of making trench JFET integrated circuit elements

1989-04-03

1991-04-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 40, 437203, 437228, H01L 21265

Patent

active

050100254

ABSTRACT:
A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate channel. The conductive layer interfaces with the gate channel to form a p-n junction. Source and drain regions are formed adjacent to a trench and disposed in electrical contact with the gate channel. An integral capacitor may be added to the construction by forming a second trench, which extends through and excavates a portion of the first trench. The drain region is extended about the surface of the second trench to remain in electrical contact with the gate channel. A layer of insulating material is applied to the second trench, which is then filled with a body of conductive material. The conductive material is insulated from the conductive layer by the insulating layer.

REFERENCES:
patent: 3223904 (1965-12-01), Warner et al.
patent: 3930300 (1976-01-01), Nicolay
patent: 3953879 (1976-04-01), O'Connor-'diArlach
patent: 4049476 (1977-09-01), Horie
patent: 4375124 (1983-05-01), Cogam
patent: 4455740 (1984-06-01), Iwai
patent: 4571815 (1986-02-01), Baliga
patent: 4633281 (1986-12-01), Benjamin et al.
patent: 4754310 (1988-06-01), Coe
patent: 4774556 (1988-09-01), Fujii et al.
R. Gegorian and G. C. Temes, Analog MOS Integrated Circuits for Signal Processing, pp. 98, 99, John Wiley & Sons, N.Y., N.Y. (1986).
Uiswamatha, "Electronic Potentiometer", J. Inst. of Electronics and Telecomm. India, vol. 22, Nov. 76, pp. 742-743.
D. C. Mayer et al., "A Submicron-Channel Vertical Junction Field-Effect Transistor", IEDM 1977, pp. 532-525.

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