Phased array semiconductor lasers with preferred emission in a s

Details Phased array semiconductor lasers with preferred emission in a s Phased array semiconductor lasers with preferred emission in a s

1984-11-01

1986-11-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 372 48, H01S 319

Patent

active

046240004

ABSTRACT:
A phased array semiconductor laser comprises a plurality of spatially disposed multiple lasing elements formed relative to an active region providing optical cavities and multi-emitters for light wave generation and propagation under lasing conditions. The optical field of the lasing elements are coupled into the optical cavities of adjacent lasing elements to provide a phased locked condition across the array. Structural means associated with the laser causes regions between the optical cavities to produce higher gain in those between regions as compared to the gain experienced in the optical cavities by spatially modulating the optical overlap of the optical field of each of the lasing elements laterally across the array so as to favor the fundamental supermode over the other potential supermodes of the array laser. The associated structural means may comprise a transparent waveguide layer adjacent to the active region and having a periodic undulation laterally across the laser array to provide the spatial modulation, or may comprise current confinement means to spatially modulating the current distribution laterally across the laser array to provide the spatial modulation or may comprise a combination of both types of such spatial modulation.

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