Patent
1988-06-14
1990-02-20
Mintel, William
357 71, 357 54, 357 81, H01L 2702
Patent
active
049031104
ABSTRACT:
A single plate capacitor includes a dielectric substrate having high dielectric constant, a first SiO.sub.2 film formed ona lower main surface of the dielectric substrate, a first TiW film formed on the first SiO.sub.2 film, a solder diffusion barrier film of Pt, Pd or Ni formed on the first TiW film, a first Au film formed on the solder diffusion barrier film, a second SiO.sub.2 film formed on an upper main surface of the dielectric substrate, a second TiW formed on the second SiO.sub.2 film and a second Au film formed on the second SiO.sub.2 film.
REFERENCES:
patent: 3496428 (1970-02-01), Volder
patent: 3499213 (1970-03-01), Lands et al.
patent: 4112196 (1978-09-01), Selig et al.
patent: 4700457 (1987-10-01), Matsukawa
Hoffman et al., "Ohmic Noble Metal Contacts to Semiconductor Oxides," IEEE Transactions on Components and Manufacturing Technology, vol. CHMT--2, No. 1, Mar. 1979, pp. 81-83.
Ting et al., "The Use of Titanium--Based Contact Barrier Layers in Silicon Technology", Thin Solid Films, 96, (1982), 327-345.
Romankiw, "Depositing Adhesion Layers Between Moble Metals and Dielectric Material," IBM Technical Disclosure Bulletin, vol. 18, No. 5, Oct. 1975, 1635-38.
Mintel William
NEC Corporation
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