Semiconductor devices having local oxide isolation

Details Semiconductor devices having local oxide isolation Semiconductor devices having local oxide isolation

1987-03-02

1990-02-20

Larkins, William D.

357 48, H01L 2704

Patent

active

049031090

ABSTRACT:
A semiconductor monolithic integrated circuit comprising circuit elements built into isolated epitaxial layer islands is described. The isolation is accomplished by part by a p-n junction between the epitaxial layer and its substrate, in part by an insulated zone of converted epitaxial material sunken only part way through the layer, and in part by a depletion layer or buried zone of the substrate conductivity type.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3534234 (1970-10-01), Clevenger
patent: 3615929 (1971-10-01), Portnoy et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3653988 (1972-04-01), Glinski et al.
Electronic Design, "Will Systems Houses Take over IC Design?" Dec. 26, 1968, pp. 64-65.
IEEE Jornal of Solid State Circuits, "Simplified Bipolar Technology and its Application to Systems" by Murphy et al., Feb. 1970, pp. 7-14.
Philips Res. Repts, "Local Oxidation of Silicon . . . " by Appels et al, Apr. 1970, pp. 118-132.

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