Patent
1989-04-17
1990-02-20
Clawson, Jr., Joseph E.
357 16, 357 41, 357 55, H21L 2980
Patent
active
049030922
ABSTRACT:
Real space hot electron transfer devices using hot electron transfer between two conducting channels are described.
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K. Hess, H. Morkoc, H. Shichijo and B. G. Streetman, "Negative Differential Resistance Through Real-Space Electron Transfer", Applied Physics Letters, vol. 35, No. 6, Sep. 15, 1979, pp. 469-471.
P. D. Coleman and J. Freeman, "Demonstation of a New Oscillator Based on Real-Space Transfer in Heterojunctions", Applied Physics Letters, vol. 40, No. 6, Mar. 15, 1982, pp. 493-495.
M. Keever, H. Shichijo, K. Hess, S. Banerjee, L. Witkowski, H. Morkoc and B. G. Streetman, "Measurements of Hot-Electron Conduction and Real-Space Transfer of GaAs-Al.sub.x Ga.sub.1-x As Heterojunction Layers", Applied Physics Letters, vol. 38, No. 1, Jan. 1, 1981, pp. 36-38.
M. Keever, K. Hess and M. Ludowise, "Fast Switching and Strorage in GaAs-Al.sub.x Ga.sub.1-x As Heterojunction Layers", IEEE Electron Device Letters, vol. EDL-3, No. 10, Oct. 1982, pp. 297-300.
Kastalsky Alexander
Luryi Sergey
American Telephone and Telegraph Company AT&T Bell Laboratories
Businger Peter A.
Clawson Jr. Joseph E.
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