Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1988-04-26
1990-02-20
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, 250423R, 313545, 3133621, 31511181, 31511191, H01J 37317
Patent
active
049028987
ABSTRACT:
An array wand for charged particle beam shaping and control applications can selectively and accurately shape or deflect single or multiple beams of charged particles so as to delineate a desired pattern in a substrate. The wand preferably takes the form of a monolithic block of material, for example semiconductor material, having one or more cavities etched through it which serve to form a collimated beam of particles. The array wand employs an Einsel lens structure which contains electrostatic electrodes for precise focusing of the beams of charged particles. The Einsel lens includes successive layers on the monolithic substrate which simultaneously act as a lens, an aperture, and a beam line for beams of charged particles.
The array wand may be manufactured, in large quantity with precision, and may be employed to form small focused beams. An important application of the array wand is in microlithography where small precision beams of charged particles are used to write circuit patterns on various circuit substrates.
A monolithic ion source may be formed separate from the array wand or, in one embodiment, may be formed in combination with the array wand in monolithic form. The ion source has utility as a source of ions apart from its utilization in a wand optics column.
REFERENCES:
patent: 3753022 (1973-08-01), Fraser
patent: 3921022 (1975-11-01), Levine
patent: 3935500 (1976-01-01), Oess et al.
patent: 3982147 (1976-09-01), Redman
patent: 4498952 (1985-02-01), Christensen
patent: 4724328 (1988-02-01), Lischke
patent: 4774433 (1988-09-01), Ikebe et al.
Jones Gary W.
Jones Susan K. Schwartz
Berman Jack I.
Microelectronics Center of North Carolina
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