Semiconductor device having perfluorinated and non-fluorinated p

Details Semiconductor device having perfluorinated and non-fluorinated p Semiconductor device having perfluorinated and non-fluorinated p

1997-03-21

1998-10-27

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257642, H01L 2348

Patent

active

058281320

ABSTRACT:
A semiconductor device comprising first and second interconnect levels (14) and (16) is described. Mixed polymeric intermetal dielectrics (46), (48) and (50) are used to separate conductive elements (22), (24), (26), (36) and (38), respectively. The intermetal dielectric bodies (46), (48) and (50) comprise a mixture of perfluorinated and non-fluorinated parylene.

REFERENCES:
patent: 5268202 (1993-12-01), You et al.
patent: 5616959 (1997-04-01), Jeng

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