Metal treatment – Compositions – Heat treating
Patent
1984-04-27
1985-09-24
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148175, 148187, 357 91, 427 531, H01L 21263, C30B 1306, B05D 306
Patent
active
045431337
ABSTRACT:
A process for producing a single crystalline semiconductor island on an insulator, comprising the steps of providing a semiconductor island comprising a nonmonocrystalline semiconductor on an insulator; forming an energy-absorbing cap layer which coats at least the upper and side surfaces of the semiconductor island; irradiating the energy-absorbing cap layer with an energy beam; and melting and transforming the coated nonmonocrystalline semiconductor into a single crystalline semiconductor with the heat generated in the energy-absorbing cap layer.
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Biegelsen et al., Applied Physics Letters, vol. 38, No. 3, Feb. 1, 1981, New York, p. 150.
Hawkins et al., Applied Physics Letter 40(4), Feb. 15, 1982.
Colinge et al., Applied Physics Letter 41(4), Aug. 15, 1982, p. 346.
Fujitsu Limited
Roy Upendra
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