Sintered silicon carbide ceramic body of high electrical resisti

Details Sintered silicon carbide ceramic body of high electrical resisti Sintered silicon carbide ceramic body of high electrical resisti

1985-10-17

1987-10-20

Lechert, Jr., Stephen J.

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 90, 501 91, 264125, 264 65, C04B 3552, C04B 3556, B29C 6700, F22B 904

Patent

active

047014270

ABSTRACT:
Sintered silicon carbide body having a D.C. electrical resistivity of at least 10.sup.8 Ohm cm at 25.degree. C., a density of at least 2.95 g/cm.sup.3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250.degree. C. or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominantly alpha-phase. The shaped body may additionally include other sintering aids such as BN or Al without destruction of desired high electrical resistivity.

REFERENCES:
patent: 4004934 (1977-01-01), Prochazka
patent: 4124667 (1978-11-01), Coppola et al.
patent: 4135938 (1979-01-01), Murata et al.
patent: 4144207 (1979-03-01), Ohnsorg
patent: 4230497 (1980-10-01), Schwetz et al.
patent: 4370421 (1983-01-01), Matsushita et al.

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