Semiconductor device

Details Semiconductor device Semiconductor device

1979-01-30

1981-04-14

Wojciechowicz, Edward J.

357 20, 357 46, 357 57, H01L 2990

Patent

active

042622956

ABSTRACT:
A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the intermediate layers among three layers constituting such sections are continuously connected within the same semiconductive substrate.
Carriers generated in the NPN (or PNP) element, which triggers avalanche at a low voltage, cause the NPN (or PNP) element having a higher avalanche breakdown voltage to be switched to a highly conductive state.
The semiconductor device of the invention provides great surge capacity, and can be used as a surge arrester of increased reliability.

REFERENCES:
patent: 3427509 (1969-02-01), Weisberg

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-161212