Semiconductor device

Details Semiconductor device Semiconductor device

1987-06-19

1988-09-06

Wojciechowicz, Edward J.

357 233, 357 239, 357 42, 357 43, 357 67, 357 71, H01L 2978

Patent

active

047696869

ABSTRACT:
Herein disclosed is a semiconductor device, especially, an MISFET which can ensure a high breakdown voltage and operate at a high speed. The semiconductor device according to the present invention reduces the sheet resistance by using an impurity region, which has an impurity concentration not exceeding 10.sup.20 cm.sup.-3, in a drain or source region and by forming a metal silicide layer on the surface of the impurity region. Moreover, the semiconductor device of the present invention is constructed such that the impurity concentration of an n-type drain or source region does not exceed 10.sup.20 cm.sup.-3 whereas the impurity concentration of a p-type drain or source region does not exceed 10.sup.19 cm.sup.-3 and such that at least one portion of the drain or source region is made of a metal silicide so that it can effectively protect the latch-up phenomenon which is caused when two or more semiconductor devices of different conductive type are integrated.

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Okabe, "A Complimentary-Pair of High Power Mosfets" 1977 IEDM pp. 416-419.
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