Superlattice gate field effect transistor

Details Superlattice gate field effect transistor Superlattice gate field effect transistor

1987-06-22

1988-09-06

Edlow, Martin H.

357 237, 357 2314, H01L 2712

Patent

active

047696834

ABSTRACT:
A quasi 1-dimensional electron gas transistor has been provided having a source electrode and a drain electrode. A plurality of electrodes are positioned between the source and drain electrodes in a manner which are parallel to the electron flow between the source and the drain electrodes. In one embodiment, the electrodes are interconnected by a gate electrode while in an alternate embodiment all the electrodes are connected to the source electrode and insulated from the gate electrode. This device provides a quantum wire for quasi 1-dimensional electron flow.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4503447 (1985-03-01), Iafrate
patent: 4503540 (1985-03-01), Nakashima
patent: 4642144 (1987-02-01), Tiedje
patent: 4644373 (1987-02-01), Williams
Cole, Electronics, Apr. 28, 1986.

Affiliated with

Also associated with

Rating

Superlattice gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Superlattice gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superlattice gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1609392