Semiconductor optical device

Coherent light generators – Particular active media – Semiconductor

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Other Related Categories

372 46, H01S 319

Type

Patent

Status

active

Patent number

056047622

Description

ABSTRACT:
A semiconductor optical device includes a n-clad layer, an active layer formed on the n-type clad, a carrier reservoir layer formed on the active layer, and a p-clad layer formed on the carrier reservoir layer. The thickness of the carrier reservoir layer is in a range where the oscillation wavelength shifts in a short wavelength direction with increasing driving current.

REFERENCES:
patent: 4796273 (1989-01-01), Yamaguchi
patent: 5034783 (1991-07-01), Chang et al.
patent: 5272109 (1993-12-01), Motoda
patent: 5375135 (1994-12-01), Okumura et al.
Morinaga et al, "Thermal Frequency Drift Suppression in Tunable DFB Lasers by Plasma Induced Frequency Shift Enhancement", IEEE Photonics Technology Letters, vol. 6, No. 4, Apr. 1994.

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