Method of forming conductive noble-metal-insulator-alloy barrier

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437190, 437192, 437201, 437919, H01L 2128

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056960182

ABSTRACT:
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4853983 (1989-08-01), Grant
patent: 4873644 (1989-10-01), Fujii et al.
patent: 4888733 (1989-12-01), Mobley
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 4918654 (1990-04-01), Eaton, Jr. et al.
patent: 4982309 (1991-01-01), Shepherd
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5079200 (1992-01-01), Jackson
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5554564 (1996-09-01), Nishioka et al.
2244 Research Disclosure, No. 345, 1 Jan. 1993, p. 79, paragraph 1-2, XP 000336532, "Oxidation and Diffusion Resistance Structure for Capacitor Structure".
A. F. Tasch, Jr. and L. H. Parker, "Memory Cell and Technology Issues for 64 and 256-Mbit One-Transistor Cell MOS DRAMs," Proceedings of the IEEE, vol. 77, No. 3, Mar. 1989, pp. 374-388.
K. Takemura, et al., "Barrier Mechanism of Pt/Ta and Pt/Ti Layers for SrTiO.sub.3 Thin Film Capacitors on Si", 4th Inter. Symp. on Integrated Ferroelectrics, C52 (1992) pp. 481-488.
T. Sakuma, S. Yamamichi, S. Matsubara, H. Yamaguchi, and Y. Miyasaka, "Barrier Layers for Realization of High Capacitance Density in SrTiO.sub.3 Thin-Film Capacitor on Silicon," Appl. Phys. Lett., 57 (23) 3 Dec. 1990, pp. 2431-2433.
M.-A. Nicolet, "Diffusion Barriers in Thin Films," Thin Solid Films, 52 (1978) 415-443.
M.-A. Nicolet, "Thin Film Diffusion Barrier for Metal-Semiconductor Contacts," Materials Research Society, 1987, pp. 19-26.
C. J. Brennan, "Characterization and Modelling of Thin-Film Ferroelectric Capacitors Using C-V Analysis", Proc. 3rd Inter. Symp. on Integrated Ferroelectrics, 354-363 (1991).
J. F. Scott, B. M. Melnick, C. A. Araujo, L. D. McMillan and R. Zuleeg, "D.C. Leakage Currents in Ferroelectric Memories," Proc. 3rd Inter. Symp. on Integrated Ferroelectrics, 176-184 (1991).
R. Waser and M. Klee, "Theory of Conduction and Breakdown in Perovskite Thin Films," Proc. 3rd Inter. Symp. on Integrated Ferroelectrics, 288-305 (1991).
P. D. Hren, H. N. Al-Shareef, S. H. Rou, A. I. Kingon, P. Buaud, and E. A. Irene, "Hillock Formation in Pt Films," Proc. MRS, 1992.
H. N. Al-Shareef, K. D. Gifford, P. D. Hren, S. H. Rou, O. Auciello, and A. I. Kingon, "Bottom Electrodes for Ferroelectric Thin Films," 1992.
S. Saito and K. Kuramasu, "Plasma Etching of RuO.sub.2 Thin Films," Japn. J. Appl. Phys., vol. 31, 1992, pp. 135-138.
S. K. Dey and R. Zuleeg, "Procesing and Parameters of Sol-Gel PZt Thin-Films for GaAs Memory Applications," Ferroelectrics, vol. 112, 1990, pp. 309-319.
C. Hanson, H. Beratan, R. Owen, M. Corbin, and S. McKenney, "Uncooled Thermal Imaging at Texas Instruments," SPIE, 1735, 17 (1992).
B. Kulwicki, A. Amin, H. R. Beratan, and C. M. Hanson, "Pyroelectric Imaging," ISAF, 92, (1992).
D. L. Polla, C.-P. Ye and T. Yamagawa, "Surface-Micromachined PbTiO.sub.3 Pyroelectric Detectors," Appl. Phys. Lett. 59, 1991, p. 3539-3541.
K. R. Bellur, H. N. Al-Shareef, S. H. Rou, K. D. Gifford, O. Auciello, and A. I. Kingon, "Electrical Characterization of Sol-Gel Derived PZT Thin Films," 1992.
S. D. Bernstein, T. Y. Wong, Y. Kisler, and R. W. Tustison, "Fatigue of Ferroelectric PbZr.sub.x Ti.sub.y O.sub.3 Capacitors with Ru and RuO.sub.x Electrodes," J. Mat. Res., 8, 1993, pp. 12-13.
P. D. Hren, S. H. Rou, H. N. Al-Shareef, M.S. Ameen, O. Auciello, and A. I. Kingon, "Bottom Electrodes for Integrated Pb(Zr,Ti)O.sub.3 Films" Integrated Ferroelectrics, vol. 2, No. 1-4, 1992.
K. Char, M. S. Colclough, T. H. Geballe, and K. E. Myers, "High T Superconductor-Normal-Superconductor Josephson Junctions Using CaRuO.sub.3 as the Metallic Barrier," Appl. PHys. Lett., 62, 1993, pp. 196-198.
Yasushiro Nishioka et al., "Time Dependent Dielectric Breakdown Characteristics of Ta.sub.2 O.sub.5 /SiO.sub.2 Double Layers," Journal of the Electrochemical Society, vol. 136, No. 3, Mar. 1989, pp. 872-873.
H. Jehn et al., "Surface and Interface Characterization of Heat-Treated (Ti,Al)N Coatings on High Speed Steel Substrates," Thin Solid Films, 153 (1987) 45-53.
Shigeaki Zaima et al., "Conduction Mechanism of Leakage Current in Ta.sub.2 O.sub.5 Films on Si Prepared by LPCVD," Journal of the Electrochemical Society, vol. 137, No. 9, Sep. 1990, pp. 2876-2879.
Yashshiro Nishioka et al., "Influence of the SiO.sub.2 at the Ta.sub.2 O.sub.5 /Si Interface on Dielectric Characteristics of Ta.sub.2 O.sub.5 Capacitors," Journal of Applied Physics, 61 (6), Mar. 15, 1987, pp. 2335-2338.
Shigeaki Zaima et al., "Preparation and Properties of Ta.sub.2 O.sub.5 Films by LPCVD for ULSI Application," Journal of the Electrochemical Society, vol. 137, No. 4, Apr. 1990, pp. 1297-13000.
G. Arlt et al., "Dielectric Properties of Fine-Grained Barium Titanate Ceramics," Journal of Applied Physics, 58 (4), Aug. 15, 1985, pp. 1619-1625.
Yoichi Miyasaka et al., "Dielectric Properties of Sputter-Deposited BaTiO.sub.3 -SrTiO.sub.3 Thin Films," 19990 IEEE 7th Internatonal Symposium on Applications of Ferroelectrics, IEEE (1991), pp. 121-124.
Q. X. Jia et al., "Reactively Sputtered RuO.sub.2 Thin Film Resistor With Near Zero Temperature Coefficient of Resistance," Thin Solid Films, 196 (1991) pp. 29-34.
T. Eimore, et al., "A Newly Designed Planar Stacked Capacitor Cell with High Dielectric Constant Film for 256 Mbit DRAM," IEEE, Dec. 5-8, 1993.
J. M. Molarius et al., "Tantalum-Based Encapsulants for Thermal Annealing of GaAs," Journal of the Electrochemical Society, vol. 138, No. 3, Mar. 1991, pp. 834-837.
H. Ichimura et al., "High-Temperature Oxidation of Ion-Plated TiN and TiAIN Films," J. Mater. Res., vol. 8, No. 5, May 1993, pp. 1093-1100.
E. Kolawa et al., "Amorphous Ta-Si-N Thin Films Alloys as Diffusion Barrier in Al/Si," J. Vac. Sci. Technol., A 8 (3), May/Jun. 1990, pp. 3006-3010.
M.-A. Nicolet et al., "Issues in Metal/Semiconductor Contact Design and Implementation," Solar Cells, 27 (1989) 177-189.
P. J. Pokela et al., "Characterization of the AL/Ta-Si-N/Au Metallization," Thin Solid Films, 203 (1991) 259-266.
L. E. Halperin, "Silicon Schottky Barriers and p-n Junctions with Highly Stable Aluminum Contact Metallization," IEEE Electron Device Letters, vol. 12, No. 6, Jun. 1991, pp. 309-311.
E. Kolawa, "Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si," IEEE Electron Device Letters, vol. 12, No. 6, Jun. 1991, pp. 321-323.
P. J. Pokela et al., "Amorphous Ternary Ta-Si-N Diffusion Barrier Between Si and Au," J. Electrochem. Soc., vol. 138, No. 7, Jul. 1991, pp. 2125-2129.
E. Kolawa et al., "Amorphous Ta-Si-N Diffusion Barriers in Si/Al and Si/Cu Metallizations," Applied Surface Science, 53 (1991) 373-376.
P. J. Pokela et al., "Thermal Oxidation of Amorphous Ternary Ta.sub.36 Si.sub.14 N.sub.50 Thin Films," J. Appl. Phys., 70 (5), 1 Sep. 1991, pp. 2828-2832.
J. S. Reid et al., "Evaluation of Amorphous (Mo, Ta, W)-Si-N Diffusion Barriers for <Si>/Cu Metallizations," Thin Solid Films, 236 (1993) 319-324.
J. S. Chen et al., "Stable Pt/Ge/Au Ohmic Contact to n-GaAs with a Ta-Si-N Barrier," Mat. Res. Soc. Symp. Proc., vol. 300, 1993, pp. 255-260.
J. S. Reid et al., "Ti-Si-N Diffusion

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