Fishing – trapping – and vermin destroying
Patent
1996-11-15
1997-12-09
Trinh, Michael
Fishing, trapping, and vermin destroying
437 29, 437 41, 437 69, 437203, H01L 218234
Patent
active
056960093
ABSTRACT:
A high-voltage MOS (metal-oxide semiconductor) device and a method for fabricating the same is provided. The high-voltage MOS device features the forming of trench-type source/drain structure in substitute of conventional highly doped structure formed by implantation. The improved structure allows the source/drain regions to occupy a small area for layout on the chip. In addition, the forming of the trench-type source/drain structure in N-wells allows an increased current path from the source/drain regions to drift regions, meaning that the conductive path for the current is not limited to only the junction between the source/drain regions and the drift regions as in conventional structures. Moreover, since the trench-type source/drain structure extends upwards from the inside of N-wells to above the surface of isolation layers, metal contact windows can be formed above the isolation layers, thus preventing the occurrence of leakage current.
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Trinh Michael
United Microelectronics Corporation
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