Method of manufacturing a field effect transistor device having

Details Method of manufacturing a field effect transistor device having Method of manufacturing a field effect transistor device having

1987-02-12

1988-09-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437177, 357 22, H01L 21265, H01L 2980

Patent

active

047693398

ABSTRACT:
This Schottky barrier gate field effect transistor has N.sup.+ -type source and drain regions formed in the surface area of a GaAs semi-insulation substrate, a channel region formed between the source and drain regions, and a gate electrode formed on this channel region. Particularly, in this Schottky barrier gate field effect transistor, the gate electrode has a first metal portion, which is preferably in Schottky contact with the channel region, and a second metal portion, which stably affixes to the first metal portion. The first and second metal portions are fixed to an insulative portion formed on the channel region.

REFERENCES:
patent: 4312680 (1982-01-01), Hsu
patent: 4358340 (1982-11-01), Fu
patent: 4489480 (1984-12-01), Martin et al.
patent: 4559693 (1985-12-01), Kamei
patent: 4592577 (1985-09-01), Jackson
patent: 4645563 (1987-02-01), Terada
patent: 4700455 (1987-10-01), Shimada et al.

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