Process for fabricating a phase shifting mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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Details

430314, 430322, 430323, G03F 900

Patent

active

056958960

ABSTRACT:
A simplified process for forming a phase shifting mask is disclosed. A chrome layer is formed on a transparent substrate and patterned. A resist layer is patterned to define the phase shifting areas and the substrate is dry etched to a first predetermined depth, stripped and cleaned. Another resist layer is patterned to define the phase shifting areas and the substrate is dry etched a second predetermined depth, stripped and cleaned. A further resist layer is patterned to define the phase shifting areas and the substrate is wet etched a third predetermined depth, stripped and cleaned. The sum of the three predetermined depths is such that it corresponds to a 180.degree. phase shift of light passing through the substrate. The third predetermined depth is at least about one third of the total depth.

REFERENCES:
patent: 5308722 (1994-05-01), Nistler
patent: 5397664 (1995-03-01), Noelscher et al.
patent: 5457006 (1995-10-01), Hirokane et al.

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