Film thickness and free carrier concentration analysis method an

Optics: measuring and testing – For optical fiber or waveguide inspection

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356382, G01B 1106, G01N 2141

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active

056045816

ABSTRACT:
The method determines the thickness and the free carrier concentration of at least one layer of a structure. An exposed surface of the structure is irradiated using spectral radiation, and the measured reflectance spectrum is compared to a calculated spectrum. Using algorithms that include terms representative of complex refractive indices, layer thickness, dielectric constants, and free carrier concentrations, values are iteratively assigned to the thickness and free carrier concentration parameters so as to produce a best fit relationship between the compared spectra, and to thereby determine those parameters.

REFERENCES:
Epifilm thickness Measurment Using Fourier Transform Infrared Spectroscopy; Effect of Refractive Index Dispersion and Refractive Index Measurment, J. Appl. Phys. 76(4), 15 Aug. 1994, pp. 2448-2454.
Infrared Reflectance Spectra of thin-Epitaxial Silicon Layers, SPIE. vol. 276, Optical Characterization Techniques for Semiconductor Technology (1981), pp. 222-226.
Applications of the theory of Optical Spectroscopy to Numerical Simulations, Applied Spectroscopy, vol. 47, No. 5, 1993, pp. 566-575.
FTIR-Spectroscopy of Layered Structures thin solid films, Coated Substrates, Profiles, Multilayers, SPIE vol. 1575, 8th International Conference on Fourier Transform Spectroscopy, (1991) pp. 169-179.
Bio-Rad Report (Epitaxial Thickness Measurements Using the Bio-Rad Labseries of Fourier Transform Infrared Spectrometers by K. Krishnan, Prasad Dasari, Phil Stout Bio-Rad Digilab Division).

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