Process for thin film formation

Fishing – trapping – and vermin destroying

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437187, H01L 21285

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active

056041535

ABSTRACT:
A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.

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Patent Abstracts of Japan, vol. 14, No. 380 (E-0965), Aug. 16, 1990, & JP-A-02 137 313 (Res. Dev. Corp. of Japan), May 25, 1990.
Applied Physics Letters, vol. 57, No. 12, Sep. 17, 1990, pp. 1221-1223, K. Tsubouchi et al., "Complete Planarization of Via Holes With Aluminum by Selective and Nonselective Chemical Vapor Deposition".
Extended Abstracts of the 1992 International Conference on Solid State Devices & Materials, Aug. 26, 1992, pp. 208-210, K. Tsbouchi et al., "Area Selective Aluminum Patterning by Atomic Hydrogen Resist".
M. Liehr, et al., Extended Abstracts of the 22nd (1990 Intern.) Conf. on Solid State Devices and Materials, Sendai, 1990, pp. 1099-1102.
H. Kawamoto, et al. "Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPSMeasurement" Japanese Journal of Applied Physics vol. 29, No. 11, Nov. 1990 (pp. 2657-2661).
K. Tsubouchi et al., "Area selective aluminum patterning by atomic hydrogen resist" Extended Abstracts of the 1992 Int. Conf. on Solid State Devices & Materials pp. 208-210 (1992). (abstract only).

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