Storage node process for deep trench-based DRAM

Details Storage node process for deep trench-based DRAM Storage node process for deep trench-based DRAM

1996-03-04

1997-08-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438696, H01L 2170

Patent

active

056565356

ABSTRACT:
A simplified method of fabricating a storage node for a deep trench-based DRAM on a semiconductor substrate. The method involves the etching a trench in a surface of the substrate and then forming a layer of dielectric material on a sidewall of the trench the top portion of which is subsequently removed from the sidewall. Next, a layer of oxide is grown on the exposed portion of the sidewall. A portion of this layer of oxide is then removed from the sidewall in order to orient the layer of oxide a predetermined distance from the surface of the substrate. Finally, the trench is filled with a semiconductive material.

REFERENCES:
patent: 5096849 (1992-03-01), Beilstein, Jr. et al.
patent: 5360758 (1994-11-01), Bronner et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5422294 (1995-06-01), Noble, Jr.
patent: 5525531 (1996-06-01), Bronner et al.

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