Method to form hemi-spherical grain (HSG) silicon from amorphous

Details Method to form hemi-spherical grain (HSG) silicon from amorphous Method to form hemi-spherical grain (HSG) silicon from amorphous

1995-12-15

1997-08-12

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438593, 438665, 438684, 438964, H01L 2170

Patent

active

056565313

ABSTRACT:
An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525.degree. C; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5227322 (1993-07-01), Ko et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5342800 (1994-08-01), Jun
patent: 5350707 (1994-09-01), Ko et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
Uemoto et al in "IEEE Symposium on VLSI Technology" 1990, pp. 2821-2822.
"A New Cylindrical Capacitor Using HSG Si for 256 Mb DRAMS" by Watanabe et al IEDM, 1992, pp. 259-262.

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