Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-01-21
1984-03-20
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29576W, 29571, 148187, 357 91, H01L 21263, H01L 2126
Patent
active
044372256
ABSTRACT:
Disclosed is a method of fabricating semi-conductor devices comprising the steps of: forming non-singlecrystalline semiconductor layer on a singlecrystalline insulation substrate, ion-implanting selectively material, which reacts with the semi-conductor layer to form insulating material, into the semiconductor layer; and applying an energy radiation or a heat treatment to the semiconductor layer, whereby the non-singlecrystalline semiconductor layer portion not implanted with said material is singlecrystallized with a seed of the singlecrystalline insulation substrate and at the same time the non-singlecrystalline semiconductor layer portion implanted with the material is rendered insulated.
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Roy Upendra
Tokyo Shibaura Denki Kabushiki Kaisha
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