Semiconductor device with anti-reflective structure

Details Semiconductor device with anti-reflective structure Semiconductor device with anti-reflective structure

1997-08-28

2000-05-02

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257435, 257436, 257749, H01L 310232, H01L 2348, H01L 2352, H01L 2940

Patent

active

060575875

ABSTRACT:
A semiconductor devices includes an anti-reflective structure for use in patterning metal layers in semiconductor devices. The anti-reflective structure is made, at least in part, using indium tin oxide. The anti-reflective structure is especially useful for patterning the metal layers with light having a wavelength of 190-300 nm. The anti-reflective structure may be a single indium tin oxide layer or may include a titanium nitride layer formed over the metal layer and an indium tin oxide layer formed over the titanium nitride layer. For many applications, the anti-reflective structure, in the presence of a photoresist layer, has a reflectivity of about 3% or less for light having a wavelength of 190-300 nm.

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Lobl, H. et al., "ITO Films for Antireflective and Antistatic Tube Coatings Prepared by D.C. Magnetron Sputtering", Surface and Coatings Technology, 82: 90-98 (1996).
Forouhi, A. et al., "Optical Characterization of ITO Films used in Flat Panel Displays", SPIE, 2725: 471-477 (Apr. 1996).

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