Integrated circuit and method

Details Integrated circuit and method Integrated circuit and method

1994-01-10

2000-05-02

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01H 8502

Patent

active

060575670

ABSTRACT:
Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have Al.sub.x Ga.sub.1-x As emitters (140) and GaAs collectors (136) and bases (138) with In.sub.y Ga.sub.1-x As added to the bases (138) to stop chloride plasma etches.

REFERENCES:
patent: 4590502 (1986-05-01), Morkoc
patent: 4652896 (1987-03-01), Das et al.
patent: 4742379 (1988-05-01), Yamashita et al.
patent: 4758870 (1988-07-01), Hase et al.
patent: 4839702 (1989-06-01), Grinberg et al.
patent: 4845541 (1989-07-01), Xu et al.
patent: 4939562 (1990-07-01), Adlerstein
patent: 4958208 (1990-09-01), Tanaka
patent: 4987463 (1991-01-01), Goronkin et al.
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5091759 (1992-02-01), Shih et al.
Ramberg, L.P., et al., "Lattice-Strained Heterojunction InGaAs/GaAs Bipolar Structures: Recombination Properties and Device Performance", Feb. 1, 1987, J. Appl. Phys., vol. 61 No. 3, pp. 1234-36.
Kim B., et al., "GaAs/A1GaAs Heterojunction MISFET's Having 1-W/mm Power Density at 18.5 GHz" Nov. 1986, IEEE Electron Device Letters, vol. EDL-7, No. 11, pp 638-639.
Su, S.L., et al., "Double Heterojunction Al.sub.x Ga.sub.1-x AS/GaAs Bipolar Transistors (DHBJT's) by MBE with a Current Gain of 1650," May 1983, IEEE Electron Device Letters, vol. EDL-4, No. 5, pp 130-132.
Hayes, J.R. et al., "Hot Electron Transport in Graded Band-Gap Base Heterojunction Bipolar Transistor," Aug. 8, 1988, Appl. Phys. Lett. vol. 53, No. 6, pp. 490-492.
Taylor, G.W. et al., "Ledistor-A Three-Terminal Double Heterostructure Optoelectronic Switch," Feb. 9, 1987, Appl. Phys. Lett. vol.50 No. 6, pp. 338-340.
Taylor, G.W., et al., "The Bipolar Inversion Channel Field-Effect Transistor (BICFET)--A New Field-Effect Solid-State Device: Theory and Structures," Nov. 1985, IEEE Transactions On Electron Devices, vol. ED-32, No. 11, pp. 2345-2355.
Cooperman, S.S. et al., "Reactive Ion Etching of GaAs and AlGaAs in a BCI.sub.3 --Ar Discharge," Jan./Feb. 1989, J. Vac. Sci, Technol. B, vol. 7, No. 1, pp. 41-46.
Bayraktaroglu, B., et al., "Microwave Performances of npn and pnp AlGaAs/GaAs Heterojunction Bipolar Transistors," 1988 IEEE MTT-S Digest, pp. 529-532.

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