Integrated circuit resistor and method of fabrication

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 29576W, 156653, 156648, 357 59, H01L 2900, H01C 1700

Patent

active

044466137

ABSTRACT:
A process for forming a resistor structure which comprises a polysilicon strip having a resistor region with tungsten leads formed on opposite ends of the strip. A protective oxide is grown on the sides of the silicon strip preventing undercutting of the oxide layer disposed beneath this strip. This prevents formation of the tungsten under the strip or along the sides of the strip which would otherwise place stress on the strip in addition causing other problems.

REFERENCES:
patent: 4075045 (1978-02-01), Rideout
patent: 4128845 (1978-12-01), Sakai
Okada et al., IEEE J. of Solid-State Circuits, vol. SC13, No. 5, Oct. 1978, pp. 693-698, abandoned application Ser. No. 06/236652 Tsai, Filed 2/23/81.

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