Method for fabricating semiconductor device and method for contr

Details Method for fabricating semiconductor device and method for contr Method for fabricating semiconductor device and method for contr

1998-10-28

2000-05-02

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 9, 438723, 438734, 438743, 156345, H01L 2100

Patent

active

060572477

ABSTRACT:
A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.

REFERENCES:
patent: 5858878 (1999-01-01), Toda
patent: 5880019 (1999-03-01), Hsieh et al.

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