Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1998-05-04
2000-05-02
Picardat, Kevin M.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438456, 438457, H01L 2130, H01L 2146
Patent
active
060572124
ABSTRACT:
A method of forming a semiconductor structure, includes steps of growing an oxide layer on a substrate to form a first wafer, separately forming a metal film on an oxidized substrate to form a second wafer, attaching the first and second wafers, performing a heat cycle for the first and second wafers to form a bond between the first and second wafers, and detaching a portion of the first wafer from the second wafer. Thus, a device, such as a back-plane for a semiconductor device, formed by the method includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.
REFERENCES:
patent: 4771016 (1988-09-01), Bajor et al.
patent: 5386342 (1995-01-01), Rostoker
patent: 5413952 (1995-05-01), Pages et al.
patent: 5665631 (1997-09-01), Lee et al.
Chan Kevin Kok
D'Emic Christopher Peter
Jones Erin Catherine
Solomon Paul Michael
Tiwari Sandip
Collins D. M.
International Business Machines - Corporation
Picardat Kevin M.
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