Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-08-03
1984-10-23
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29577C, 148 15, 148187, 357 34, 357 91, H01L 2126, H01L 21225
Patent
active
044779658
ABSTRACT:
The invention proposes a process for manufacturing a monolithic integrated circuit comprising at least one bipolar transistor in which the dopings of the regions are inserted into the substrate (2) exclusively by way of ion implantations. The invention deals with the problem of the current gain value variations during mass-production. This problem is solved in that during the implantation of the base dopings, in which the base area (32) is defined by means of a photoresist mask (5), the emitter area (11) is covered with an oxidation masking layer portion (71), with the ions of the base region (3) being implanted into the substrate surface once at a low accelerating energy and a great dose, with the oxidation masking layer portion (71) serving as the mask and, the next time, at a high accelerating energy and a relatively small dose, in the course of which the oxidation masking layer portion (1) is penetrated.
REFERENCES:
patent: 4199380 (1980-04-01), Farrell et al.
patent: 4242791 (1981-01-01), Horng et al.
patent: 4333774 (1982-06-01), Kamioka
patent: 4376664 (1983-03-01), Hataishi et al.
DAS, IBM-TDB, 22, (1979), 582-583.
Lee, IBM-TDB, 22, (1979), 1454.
IT&T Industries, Inc.
Lenkszus Donald J.
Roy Upendra
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