Field induced gap infrared detector

Details Field induced gap infrared detector Field induced gap infrared detector

1989-06-21

1990-08-28

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

2503381, 2503382, 2504931, 25037012, 357 30, 357 27, 357 61, G01J 500, G01J 506

Patent

active

049528114

ABSTRACT:
A tunable infrared detector employing a vanishing band gap semimetal material which is provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities. The semimetal material may thus operate as a semiconductor type detector with a wavelength sensitivity corresponding to the induced band gap in a preferred embodiment of a diode structure. Preferred semimetal materials include Hg.sub.1-x Cd.sub.x Te, x<0.15, HgCdSe, BiSb, .alpha.-Sn, HgMgTe, HgMnTe, HgZnTe, HgMnSe, HgMgSe, and HgZnSe. The magnetic field induces a band gap in the semimetal material proportional to the strength of the magnetic field allowing tunable detection cutoff wavelengths. For an applied magnetic field from 5 to 10 Tesla, the wavelength detection cutoff will be in the range of 20-50 microns for Hg.sub.1-x Cd.sub.x Te alloys with x about 0.15. A similar approach may also be employed to generate infrared energy in a desired wavelength by using the magnetic field to induce the desired band gap and then operating the structure in a light emitting diode or semiconductor laser type of configuration.

REFERENCES:
patent: 3274387 (1966-09-01), Putley
patent: 3496024 (1970-02-01), Ruehrwein
patent: 4749952 (1988-06-01), Morimoto
patent: 4785186 (1988-11-01), Street et al.
patent: 4801991 (1989-01-01), Hisa
E. R. Gertner et al., "HgCdTe on Sapphire--A New Approach to Infrared Detector Arrays", J. Crystal Growth, 72, 462-467 (1985).
Harmon, "Properties of Mercury Chalcogenides", Physics and Chemistry of II-VI Compounds, North-Holland Publishing Company, 1967, p. 803.
Lovett, "Semimetals & Narrow-Bandgap Semiconductors", pp. 1, 4, 5.
Omar, "Elementary Solid State Physics: Principles and Applications", Addison-Wesley Publishing Co., pp. 210-212.
R. A. Reidel et al., "High Performance Photovoltaic Infrared Devices in Hg.sub.1-x Cd.sub.x Te on Sapphire", Appl. Phys. Lett., 46 (1), 64-66 (1985).
L. O. Bubulac et al., "Boron and Indium Ion-Implanted Junctions in HgCdTe Grown on CdTe and CdTe/Al.sub.2 O.sub.3 ", J. Vac. Sci. Technol., A 4 (4), 2169-2173 (1986).
R. Kay et al., "HgCdTe Photovoltaic Detectors on Si Substrates", Appl. Phys. Lett., 21 (26), 2211 (1987).
J. P. Rode, Infrared Physics, 124, 443 (1984).
P. Byszewski et al., "Magnetic-Field-Induced Energy Gap in HgTe", Phys. Stat. Sol., (b) 71, 117-124 (1975).
Y. Geldner et al., "Magnetooptical Investigation of Hg.sub.1-x Cd.sub.2 Te Mixed Crystals", Phys. Stat. Sol., (b) 82, 149-159 (1977).
W. Zawadzki et al., "Anisotropic Effects Induced by Magnetic Field on Zero-Gap Semiconductors", Solid State Commum., 15, 303-306 (1974).
C. T. Elliott et al., Phys. Rev., 5, 2985-2997 (1972).

Affiliated with

Also associated with

Rating

Field induced gap infrared detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field induced gap infrared detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field induced gap infrared detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1591649