Monolithically integrated photodiode-FET combination

Details Monolithically integrated photodiode-FET combination Monolithically integrated photodiode-FET combination

1990-05-25

1992-04-21

LaRoche, Eugene R.

357 22, 357 58, H01L 2714

Patent

active

051073196

ABSTRACT:
A photodiode-FET combination having an optimized layer structure wherein the photodiode and the FET are separated from one another by a separating trench and are separated from the substrate by barrier layers forming a pn-junction in order to avoid tributary currents. A layer sequence is provided formed of an absorption layer grown on in surface-wide fashion, of a photodiode layer that is likewise grown on in surface-wide fashion and which is etched back to the region of light incidence in the region of the photodiode, of a channel layer in the region of the FET, and of a cover layer on the channel layer which forms a gate.

REFERENCES:
patent: 4447746 (1984-05-01), Fang
patent: 4729000 (1988-03-01), Abrokwah
patent: 4894703 (1990-01-01), Hammamsy
Siemens Forsch.-u. Entwicl. Bd. (1988) Nr 4 Monolithically Integrated InGaAs/InP:Fe Photodiode-Junction Field-Effect Transistor Combination.

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