Semiconductor device with first and second buffer layers

Details Semiconductor device with first and second buffer layers Semiconductor device with first and second buffer layers

1990-11-20

1992-04-21

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 357 22, 372 43, H01L 2714

Patent

active

051073170

ABSTRACT:
A semiconductor device comprises a crystalline substrate with a silicon surface, a first buffer layer of GaAs or GaAs-containing compound formed on the Si surfaces and a second buffer layer of a Ge or Ge-containing crystalline layer formed as an intervening layer between the first layer and a compound semiconductor layer.

REFERENCES:
patent: 4400221 (1983-08-01), Rahilly
patent: 4716445 (1987-12-01), Sone
patent: 4891329 (1990-01-01), Reisman
R. Fischer, N. Chand, W. Kopp and H. Morkoc, "GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy", Applied Physics Letters, 47 (4) Aug. 15, 1985, pp. 397-399.
Dumke et al., "Heterostructure Long Lifetime Hot Electron Transistor," IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3229-3231.
Sheldon et al., "Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrate by Molecular Beam Epitaxy," Appl. Phys. Lett., 45 (3), Aug. 1, 1984, pp. 274-276.

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