Silicon wafer for a semiconductor substrate and the method for m

Details Silicon wafer for a semiconductor substrate and the method for m Silicon wafer for a semiconductor substrate and the method for m

1988-06-30

1989-10-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437 12, 148DIG125, H01L 21324

Patent

active

048762245

ABSTRACT:
A silicon wafer for a semiconductor substrate comprises a flat wafer body, with a polycrystalline silicon layer formed only on the rear surface of said wafer body.
The silicon wafer is manufactured by the steps of forming a polycrystalline silicon layer on the entire surface of the silicon wafer body, etching and removing the portion of the polycrystalline silicon layer which is formed on the side surface of silicon wafer body, and polishing and removing the polycrystalline silicon layer on the front surface of the silicon wafer body.

REFERENCES:
patent: 3923567 (1975-12-01), Lawrence
patent: 4053335 (1977-10-01), Hu
patent: 4608095 (1986-08-01), Hill
patent: 4608096 (1986-08-01), Hill
patent: 4622082 (1986-11-01), Dyson
patent: 4659400 (1987-04-01), Garbis
patent: 4666532 (1987-05-01), Koub
Ghandi, S. K., VLSI Fabricatoin Principles, p. 524, 1983, John Wiley and Sons, 1983.

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