Method for repairing a pattern

Details Method for repairing a pattern Method for repairing a pattern

1988-11-08

1990-08-28

Nguyen, Nam X.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427140, 2504923, B05D 306

Patent

active

049524216

ABSTRACT:
The method for repairing the pattern is to repair the lacking portion of the pattern included in the X-ray exposure mask with the WF.sub.6 gas being filled in the vicinity thereof, wherein the focused ion beam irradiates the defect portion, whereby the WF.sub.6 gas is decomposed to form a tungsten thin film so as to at least fill the lacking portion. On this occasion, the focused ion beam is successively applied so that it is always in contact with the edge of the tungsten thin film constituting the pattern.

REFERENCES:
patent: 4250832 (1981-02-01), Ozaki
patent: 4457803 (1984-07-01), Takigawa
patent: 4605566 (1986-08-01), Matsui et al.
patent: 4636403 (1987-01-01), Fisanick et al.
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4724159 (1988-02-01), Yamazaki et al.
SPIE: "Electron-Beam, X-Ray, Ion-Beam Techniques for Submicrometer Lithographies V" by P. D. Blais, vol. 632; 11-12, Mar. 1986, pp. 97-102.
J. Vac. Sci. Technol.: "Computer Similation of Current Density Profiles in Focused Ion Beams", by J. W. Ward, B5 (1), Jan./Feb. 1987, pp. 169-173.

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