Method for widening the laser planarization process window for m

Details Method for widening the laser planarization process window for m Method for widening the laser planarization process window for m

1990-12-06

1992-04-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG134, 437173, 437245, 427 531, H01L 21268

Patent

active

051067790

ABSTRACT:
The invention relates to taking advantage of increasing the boiling point of a material by increasing pressure within the processing chamber, which will then push the optical ablation limit to a higher optical fluence (laser intensity). A method in accordance with the invention of planarizing a metallic film on a semiconductor wafer employing laser energy comprises: a) injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and b) selectively applying laser energy to the metallic film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr. Increasing pressure within the chamber in this manner will raise the boiling temperature of the particular metallic film without a corresponding significant increase in the melting temperature of the metallic film.

REFERENCES:
patent: 4674176 (1987-06-01), Tuckerman
patent: 4681795 (1987-07-01), Tuckerman
patent: 4758533 (1988-07-01), Mage et al.
patent: 4920707 (1990-04-01), Mukai
patent: 5032233 (1991-07-01), Yu
Wolf et al., "Silicon Processing for the VLSI Era", vol. 2, Lattice Press, Sunset Beach, Calif. (1990), pp. 255-256.
Liu et al., "A Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization", Sixth International IEEE VLSI Multilevel Interconnection Conference Proceedings, Jun. 12-13 (1989), pp. 329-335.

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