Process for manufacturing vertical dynamic random access memorie

Details Process for manufacturing vertical dynamic random access memorie Process for manufacturing vertical dynamic random access memorie

1990-07-30

1992-04-21

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437 62, 437238, 437919, H01L 2170

Patent

active

051067757

ABSTRACT:
A semiconductor memory comprises a switching device and a charge-storage device disposed at the upper and lower sides, respectively, of each of semiconductor islands. The islands are formed on a semiconductor substrate that is completely isolated from the semiconductor substrate by an insulator. The switching device and charge-storage device are substantially the same width. The memory cell structure is extremely small. The cell structure is highly resistant to alpha-particles and is formed self-aligned. During manufacture, the SiO.sub.2 island is oxidized adjacent its lower end to insulate the island from the substrate.

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