Method of making a semiconductor device that comprises p-type II

Details Method of making a semiconductor device that comprises p-type II Method of making a semiconductor device that comprises p-type II

1990-10-30

1992-04-21

Kunemund, Robert

Fishing, trapping, and vermin destroying

357 34, 148DIG11, 148DIG72, H01L 21265, H01L 2973

Patent

active

051067668

ABSTRACT:
A novel method of making a semiconductor device that comprises p-type III-V semiconductor material is disclosed. The method comprises heating of a graphite body such that the body serves as a sublimation source of carbon atoms that are incorporated into the III-V semiconductor material. Exemplarily, the carbon doped material is the base of a GaAs-based HBT.

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