Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Patent
1994-11-04
1996-01-30
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
257482, 257773, H01L 2906, H01L 2348, H01L 2352, H01L 2940
Patent
active
054882532
ABSTRACT:
A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; lower electrodes disposed on the front surface of the substrate and a rear electrode disposed on the rear surface of the substrate; an air-bridge wiring disposed on the front surface of the substrate and connecting two of the lower electrodes; a via-hole penetrating through the semiconductor substrate in the vicinity of the two selected lower electrodes; and via-hole wiring disposed in the via-hole and connecting the selected lower electrodes to the rear electrode, the air-bridge wiring and the via-hole wiring being a continuous, unitary electroplated metal film. The air-bridge wiring and the via-hole wiring are directly connected without any intermediate wiring so that a junction of these wirings has no contact resistance. Further, since these wirings are continuous in the electroplated metal film, mechanical strength and reliability are improved.
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patent: 5347149 (1994-09-01), Bayraktaroglu
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McCormack et al, "A GaAs MSI 8-Bit Multiplexer and Demultiplexer", IEEE GaAs IC Symposium, 1982, pp. 25-26.
T. Andrade, "Fabrication Technique of GaAs Monolithic Microwave IC", Solid State Technology, Apr. 1985, pp. 62-69.
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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