Method for measuring temperature of semiconductor substrate and

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2504922, 356 51, 374121, G06F 1500, G01S 562

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active

048902454

ABSTRACT:
An apparatus and a method for detecting the temperature of a substrate, and for controlling the radiation-annealing of the substrate, for example, measures the intensity of infrared light from the substrate when the substrate is irradiated by measuring infrared light and also when the substrate is not irradiated by the infrared light. The temperature is calculated from the transmissivity and emissivity of the substrate, which are calculated from the intensity measurements.

REFERENCES:
patent: 3451254 (1969-06-01), Maley
patent: 4513384 (1985-04-01), Rosencwaig
patent: 4568201 (1986-02-01), Noda
patent: 4741626 (1988-05-01), Hashimoto
patent: 4750139 (1988-06-01), Dils
Ehrlich et al.; "Integrated Circuit Wafer Temperature Detector", IBM Technical Disclosure; vol. 20, No. 6, Nov. 1977.

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