Electrode structure for a semiconductor devices

Details Electrode structure for a semiconductor devices Electrode structure for a semiconductor devices

1983-07-12

1986-05-06

Larkins, William D.

Metal treatment

Stock

Ferrous

357 12, 357 20, 357 33, 357 86, 357 89, 148DIG20, 148DIG122, 148DIG140, H01L 2904, H01L 2906, H01L 2946, H01L 2991

Patent

active

045875472

ABSTRACT:
An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a conductive layer disposed on one surface of the semiconductive layer; first regions which intervene between the layers and serve as passages for transmitting minority carriers from the semiconductive layer to said conductive layer; and second regions which intervene between said layers and serve as passages for conveying majority carriers between the semiconductive layer and conductive layer, the first and second regions being selectively formed on the semiconductive layer so as to be adjacent to one another.

REFERENCES:
patent: 3217212 (1965-11-01), Ryder
patent: 3395320 (1968-07-01), Ansley
patent: 3497776 (1970-02-01), Philips
patent: 3617829 (1971-11-01), Lesk
patent: 3641403 (1972-02-01), Nakata
patent: 3858233 (1974-12-01), Miyata et al.
patent: 3918082 (1975-11-01), Hutson
patent: 4074303 (1978-02-01), Benda et al.
patent: 4156246 (1979-05-01), Pedersen

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