Method for producing a semiconductor device having a silicon-on-

Details Method for producing a semiconductor device having a silicon-on- Method for producing a semiconductor device having a silicon-on-

1989-01-17

1989-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 49, H01L 2176, H01L 2184

Patent

active

048898295

ABSTRACT:
A method for producing a semiconductor device having a silicon-on-insulator structure, includes the steps of depositing a first insulation film on a silicon substrate by a chemical vapor deposition process, patterning said first insulation film so as to be left in a silicon-on-insulator (SOI) element region, a portion of said silicon substrate having no first insulation film thereon being served as a bulk element region, depositing a polysilicon layer on an entire surface of said silicon substrate, patterning said polysilicon layer so as to be left on said patterned first insulation film, a patterned polysilicon layer being served as an active region, and simultaneously forming second and third insulation films for use in element insulation in said silicon substrate and said patterned polysilicon layer, respectively, by a local-oxidation-of-silicon (LOCOS) process, so that said bulk element region in surrounded by said second insulation film, and said SOI element region is surrounded by said third insulation film.

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