Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1989-03-09

1989-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 35, 437953, H01L 21265

Patent

active

048898201

ABSTRACT:
A method of producing a semiconductor device comprises the steps of: preparing a semiconductor substrate, forming a gate insulating layer on the semiconductor substrate, forming a gate electrode on the gate insulating layer, forming a source/drain region in the semiconductor substrate, forming an insulating cover layer on the entire exposed surface, forming a mask on the insulating cover layer having an opening over the gate electrode, implanting one conductivity type impurity ions into the semiconductor substrate through the insulating cover layer, the gate electrode and the gate insulating layer as a first ion implanting process, implanting opposite conductivity type impurity ions into the semiconductor substrate therethrough as a second implanting process, at an implanting angle larger than that used in the first ion implanting process with respect to the normal plane of the semiconductor substrate and to substantially the same depth as the first ion implanting process, and at a dosage smaller than that in the first ion implanting process, whereby the one conductivity type impurity ions at laterally spread portions are compensated.

REFERENCES:
patent: 3615875 (1971-10-01), Morita et al.
patent: 4280854 (1981-07-01), Shibata et al.
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4417385 (1983-11-01), Temple
patent: 4737471 (1988-04-01), Shirato et al.

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