Photosensitive device for infrared radiation

Details Photosensitive device for infrared radiation Photosensitive device for infrared radiation

1984-11-09

1986-05-06

Howell, Janice A.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

250370, G01J 100

Patent

active

045874263

ABSTRACT:
In a device comprising N lines and M columns of infrared-sensitive photodiodes, the charges derived from the detectors of one column are integrated in a first series of capacitors. MOS transistors connect the first series of capacitors to a second series in order to produce a distribution of charges between these capacitors. MOS transistors mounted as emitter-followers read the level of charges within the second capacitors while integration of the charges takes place in the first capacitors of the detectors of the next column. The detectors and the remainder of the device are integrated on two different semiconductor substrates but the device as a whole is integrated in one cryostat having a single output.

REFERENCES:
patent: 4004148 (1977-01-01), Howard et al.
patent: 4443701 (1984-04-01), Bailey
patent: 4529884 (1985-07-01), Wolicki et al.
Electronics Letters, vol. 18, No. 7, Apr. 1982 (Londres, GB) R. A. Ballingall et al.: "Electronically Scanned CMT Detector . . . ".
Patents Abstracts of Japan, vol. 7, No. 178(E191) (1323) Aug. 6, 1983, & JP-A-58-93 477 (Pioneer K.K.) (5-19-1983).
Microelectronics Journal, vol. 10, No. 1, May-Jun. 1979, MacKintosh Publ. Ltd (Luton, US) C. Tassell et al.: "Photodiode Arrays-Characteristics . . . ".

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