Process and structure for thin film transistor with aluminum con

Details Process and structure for thin film transistor with aluminum con Process and structure for thin film transistor with aluminum con

1989-04-10

1989-12-26

Heyman, John S.

350333, 350320, G02F 1133

Patent

active

048894117

ABSTRACT:
A thin film FET switching element, particularly useful in liquid crystal displays, employs a set of special materials to ensure compatibility with the indium tin oxide of a pixel electrode layer used as transparent conductive material in liquid crystal display devices. These materials include the use of titanium as a gate electrode material and the use of aluminum as a material to enhance electrical contact between source and drain pads and an underlying layer of amorphous silicon. The apparatus and process of the present invention provide enhanced fabrication yield and device reliability.

REFERENCES:
patent: 4666253 (1987-05-01), Yoshida
patent: 4704002 (1987-11-01), Kikuchi et al.

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